Why do III-V semiconductors (e.g., GaAs, GaN and AlN) have a wider bandgap than group IV semiconductors (Ge, Si and SiC) of similar atomic numbers? - Quora
Determination of Band Structure of Gallium-Arsenide and Aluminium-Arsenide Using Density Functional Theory
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Materials | Free Full-Text | First Principle Calculation of Accurate Electronic and Related Properties of Zinc Blende Indium Arsenide (zb-InAs)
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Density Functional Theory Calculations Revealing Metal‐like Band Structures and Work Function Variation for Ultrathin Gallium Arsenide (111) Surface Layers - Tan - 2019 - Chemistry – An Asian Journal - Wiley Online Library
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Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch | Nature Communications
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1. Empirical tight-binding sp3s* band structure of GaAs, GaP, AlAs, InAs, C (diamond) and Si — nextnano Manual
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